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Strained-layer InGaAs-GaAs-AlGaAs photopumped and current injection lasers

Journal Article · · IEEE J. Quant. Electron.; (United States)
DOI:https://doi.org/10.1109/3.7091· OSTI ID:6721358

In recent years, it has been established that high-quality strained-layer superlattices and quantum-well heterostructures can be fabricated from component materials that are lattice mismatched in bulk form. In this paper, the authors present the materials growth, materials characterization, device fabrication, device results, and modeling of strained-layer InGaAs-GaAs-AlGaAs photopumped and current injection quantum-well layers. Experimental and theoretical methods for determining the electronic energy states in psuedomorphic quantum wells are presented and discussed, and design curves for the emission energy of biaxially compressed InGaAs on GaAs are presented as a function of indium composition and quantum well width. Photopumped laser with thresholds comparable to early lattice-matched AlGaAs-GaAs quantum well lasers as well as continuous wave room temperature strained-layer injection lasers have been demonstrated. The temperature dependence of the current injection devices is good (T/sub 0/ = 147 K) in marked contrast to photopumped samples. Finally, preliminary life test results indicate that long-lived strained-layer injection lasers may be possible.

Research Organization:
North Carolina State Univ., Raleigh, NC (US)
OSTI ID:
6721358
Journal Information:
IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 24:8; ISSN IEJQA
Country of Publication:
United States
Language:
English