Highly polarized electrons from GaAs-GaAsP and InGaAs-AlGaAs strained-layer superlattice photocathodes
Journal Article
·
· Journal of Applied Physics
- Department of Physics, Graduate School of Science, Nagoya University, Nagoya 464-8602 (Japan)
GaAs-GaAsP and InGaAs-AlGaAs strained-layer superlattice photocathodes are presented as emission sources for highly polarized electron beams. The GaAs-GaAsP cathode achieved a maximum polarization of 92({+-}6)% with a quantum efficiency of 0.5%, while the InGaAs-AlGaAs cathode provides a higher quantum efficiency (0.7%) but a lower polarization [77({+-}5)%]. Criteria for achieving high polarization using superlattice photocathodes are discussed based on experimental spin-resolved quantum efficiency spectra.
- OSTI ID:
- 20713931
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 97; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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