Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers

Journal Article · Sun Dec 31 23:00:00 EST 1989 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/68.47025· OSTI ID:6923355

Offsey, S D; Schaff, W J; Tasker, P J; Eastman, L F ^[1]

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1. Dept. of Electrical Engineering, Cornell Univ., Ithaca, NY (US)

This paper reports GaAs--AlGaAs and strained layer In{sub 0.3}Ga{sub 0.7}As--GaAs--AlGaAs graded index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy. The strained layer lasers have threshold currents of 12 mA for 3 {mu}m {times} 400 {mu}m devices (1000 A/cm{sup 2}) and threshold current densities of 167 A/cm{sup 2} for 150 {mu}m {times} 800 {mu}m devices. The threshold currents of strained layer InGaAs lasers are lower than those of GaAs lasers for all dimensions tested with 20 {mu}m wide GaAs devices exhibiting threshold currents three times those of In{sub 0.3}Ga{sub 0.7}As devices. Microwave modulation of 10 {mu}m {times} 500 {mu}m strained layer lasers with simple mesa structures yields bandwidths of 6 GHz. For all dimensions tested, strained layer InGaAs devices have greater bandwidths than GaAs devices. These measurements confirm theoretical predictions of the effects of valence band modification due to biaxially compressive strain.

• OSTI ID: 6923355
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 2:1; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

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71 CLASSICAL AND QUANTUM MECHANICS
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ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONFINEMENT
CURRENT DENSITY
EFFICIENCY
ELECTROMAGNETIC RADIATION
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EPITAXY
FABRICATION
FREQUENCY MODULATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
JUNCTIONS
LASER MATERIALS
LASERS
LAYERS
MATERIALS
MICROWAVE RADIATION
MODULATION
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PLASMA CONFINEMENT
PNICTIDES
QUANTUM EFFICIENCY
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STIMULATED EMISSION