High-efficiency AlGaAs/GaAs single-quantum-well semiconductor laser with strained superlattice buffer layer

Journal Article · Sun Jan 01 04:00:00 EST 1989 · IEEE Photonics Technol. Lett.; (United States)

DOI:https://doi.org/10.1109/68.87878· OSTI ID:5991288

Imanaka, K; Sato, F; Imamoto, H; Shimura, M

A strained superlattice buffer (SSLB) layer composed of short period (InGaAs)(GaAs) superlattice has been introduced into a lattice-matched AlGaAs/GaAs system in order to reduce the internal stress. A five times higher photoluminescence peak intensity has been observed from a singe quantum well (SQW) with the SSLB than without the SSLB. A high-quantum efficiency, a small cavity loss, and high-output power operation have been achieved in a narrow ridge-waveguide 770 nm graded-index-separate confinement heterostructure SQW laser diode with the SSLB.

• Research Organization: Central R and D Lab., OMRON Tateisi Electronics Co., Nagaokakyo, Kyoto, 617 (JP)
• OSTI ID: 5991288
• Journal Information: IEEE Photonics Technol. Lett.; (United States), Journal Name: IEEE Photonics Technol. Lett.; (United States) Vol. 1:1; ISSN IPTLE
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603 -- Materials-- Properties
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EFFICIENCY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER MATERIALS
LASERS
LIGHT EMITTING DIODES
LUMINESCENCE
MATERIALS
PHOTOLUMINESCENCE
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SUPERLATTICES
WAVEGUIDES