Low current threshold AlGaAs visible laser diodes with an (AlGaAs)/sub m-italic/(GaAs)/sub n-italic/ superlattice quantum well

Journal Article · Mon Sep 15 00:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97064· OSTI ID:5329107

Hayakawa, T; Suyama, T; Takahashi, K; Kondo, M; Yamamoto, S; Hijikata, T

Very short period (AlGaAs)/sub m-italic/(GaAs)/sub n-italic/ superlattices (SL's) have been used for single quantum wells (SQW's) of visible laser diodes emitting in the wavelength region of 680--785 nm for the first time. The threshold current of graded-index separate-confinement-heterostructure (GRIN SCH) lasers with SL SQW's is lower than that of lasers with AlGaAs alloy SQW's. The ridge-waveguide structure GRIN SCH SL SQW laser emitting at 785 nm shows the low threshold current of 11 mA.

• Research Organization: Central Research Laboratories, Sharp Corporation, Tenri, Nara 632, Japan
• OSTI ID: 5329107
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY-LEVEL TRANSITIONS
EXPERIMENTAL DATA
FABRICATION
INFORMATION
LASERS
NUMERICAL DATA
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STIMULATED EMISSION
SUPERLATTICES
THRESHOLD CURRENT
VISIBLE RADIATION