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Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.102038· OSTI ID:5289752
; ; ; ; ;  [1]
  1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (US)
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Record low threshold current densities have been achieved in InGaAs/InGaAsP step graded index separate confinement (GRIN SCH) quantum well lasers emitting close to 1.50 {mu}m. Single (SQW) and multiple (MQW) quantum well lasers with 300--500 {mu}m long cavities had threshold current densities as low as 1.9 and 0.9 kA/cm{sup 2}, respectively. In longer cavity devices, threshold current densities as low as 750 and 450 A/cm{sup 2} have been measured in SQW and MQW lasers, respectively. These lasers show no significant change in threshold current density with well thicknesses varying from 5 to 25 nm which demonstrate the effectiveness of the graded index in the carrier capture process. Buried-heterostructure GRIN SCH SQW and MQW with active layer widths of {similar to}2 {mu}m show threshold currents of 15 and 9 mA, respectively.

OSTI ID:
5289752
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:22; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CURRENT DENSITY
CURRENTS
DATA
ELECTRIC CURRENTS
EPITAXY
EXPERIMENTAL DATA
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASER CAVITIES
LASERS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THIN FILMS
THRESHOLD CURRENT
VAPOR PHASE EPITAXY