High-power operation in 0. 98-. mu. m strained-layer InGaAs-GaAs single-quantum-well ridge waveguide lasers

Journal Article · Fri Nov 30 23:00:00 EST 1990 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/68.62006· OSTI ID:5771771

Takeshita, T; Okayasu, M; Uehara, S ^[1]

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1. NTT Opto-Electronics Lab., Kanagawa 243-01 (JP)

This paper reports that high power strained-layer InGaAs-GaAs graded-index separate confinement heterostructure (GRIN-SCH) single-quantum-well (SQW) lasers at an emission wavelength of 0.98 {mu}m have been fabricated. A light power as high as 270 mW and a maximum front power conversion efficiency of 51.5% have been obtained for the antireflective and highly-reflective coated laser with 9-{mu}m-wide ridge and 600-{mu}m-long cavity.

• OSTI ID: 5771771
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 2:12; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
CONVERSION
EFFICIENCY
ELECTROMAGNETIC RADIATION
ENERGY CONVERSION
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFRARED RADIATION
JUNCTIONS
LASER CAVITIES
LASERS
LAYERS
NEAR INFRARED RADIATION
OPERATION
PNICTIDES
POWER
RADIATIONS
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STRAINS
WAVEGUIDES