Very low threshold current GaAs--AlGaAs GRIN-SCH lasers grown by MBE for OEIC applications
Very highly efficient GaAs--AlGaAs GRIN--SCH lasers were grown on an n-GaAs substrate as well as on a semi-insulating GaAs substrate by MBE. The threshold current density J/sub t/h of the lasers was found to be minimum when the thickness of the GaAs quantum well active layer is 6 nm. The lowest J/sub t/h of 260 A/cm/sup 2/ was achieved for the broad-area Fabry--Perot laser (the Al composition of the cladding layer x = 0.7, the cavity length L = 400 ..mu..m). A ridge-waveguide (5 ..mu..m wide stripe) GaAs--AlGaAs GRIN--SCH laser, which is monolithically integrated with GaAs MESFET's on a semi-insulating GaAs substrate, exhibited cw operation with a threshold current as low as 19 mA at room temperature.
- Research Organization:
- Fujitsu Limited, 1677 Ono, Atsugi, 243-01, Japan
- OSTI ID:
- 6824913
- Journal Information:
- J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 2:2; ISSN JVTBD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COMPOSITION
CURRENT DENSITY
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
ELECTRONIC CIRCUITS
EPITAXY
FABRICATION
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTEGRATED CIRCUITS
LASERS
MICROELECTRONIC CIRCUITS
MOLECULAR BEAM EPITAXY
OPERATION
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
TRANSISTORS