Study on decrease in lasing threshold current of GaAs/AlGaAs single quantum-well lasers through introduction of superlattice waveguide layers
A systematic study for evaluating the effect of introducing short-period superlattice waveguide layers on the threshold current of single quantum-well diode lasers is reported. The waveguide layers which consist of short-period GaAs/AlAs superlattices, in place of AlGaAs alloys, resulted in a decrease by a factor of 4--6 in the lasing threshold current density of GaAs/AlGaAs single quantum-well diode lasers of separate confinement heterostructure. A time-resolved photoluminescence study of those laser structures revealed that the threshold current reduction was the result of an improvement of overall nonradiative carrier recombination lifetime of single quantum wells by more than a factor of 10.
- Research Organization:
- Opto-Electronics Research Laboratories, NEC Corporation, 4-1-1, Miyazaki, Miyamae-ku, Kawasaki, 213 Japan
- OSTI ID:
- 5386138
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:9; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
LAYERS
LUMINESCENCE
NUMERICAL DATA
PHOTOLUMINESCENCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SUPERLATTICES
THRESHOLD CURRENT
WAVEGUIDES