GaAs double quantum well laser diode with short-period (AlGaAs)/sub m/(GaAs)/sub n/ superlattice barriers

Journal Article · Mon Apr 10 00:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100675· OSTI ID:6475610

Imamoto, H; Sato, F; Imanaka, K; Shimura, M

A short-period (AlGaAs)/sub m/(GaAs)/sub n/ superlattice has been applied to the barrier layers in a single and a multiple quantum well structure prepared by molecular beam epitaxy in order to improve the interface quality. With a 38 A thin GaAs quantum well without employing aluminum, a low threshold current density of 260 A/cm/sup 2/, a high characteristic temperature (T/sub 0/) of 205 K, and a high differential quantum efficiency of 75% have been achieved in a double quantum well ridge waveguide laser diode emitting at 780 nm.

• Research Organization: Central RandD Laboratory, OMRON Tateisi Electronics Co., Shimokaiinji, Nagaokakyo, Kyoto 617, Japan
• OSTI ID: 6475610
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:15; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENT DENSITY
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
EPITAXY
FABRICATION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
MOLECULAR BEAM EPITAXY
PERFORMANCE
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SUPERLATTICES
THIN FILMS
THRESHOLD CURRENT