Broad area phase-locked superlattice barrier quantum well laser diode
Journal Article
·
· IEEE Photonics Technol. Lett.; (United States)
Extremely broad area quantum well laser diode was fabricated by molecular beam epitaxy. Even in a 350 ..mu..m wide mesa laser, single-lobed phase-locked narrow beam was obtained owing to high-uniformity quantum well GRIN-SCH structure with (AlGaAs)(GaAs) short period superlattice barrier layer and uniform current injection by mesa-restricted structure.
- Research Organization:
- Central R and D Lab., Omron Tateisi Electronics Co., Nagaokakyo City, Kyoto (JP)
- OSTI ID:
- 6183873
- Journal Information:
- IEEE Photonics Technol. Lett.; (United States), Journal Name: IEEE Photonics Technol. Lett.; (United States) Vol. 1:4; ISSN IPTLE
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAM OPTICS
EFFICIENCY
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
MODE LOCKING
MOLECULAR BEAM EPITAXY
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SUPERLATTICES
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAM OPTICS
EFFICIENCY
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
MODE LOCKING
MOLECULAR BEAM EPITAXY
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SUPERLATTICES