Oxynitridation-enhanced diffusion of boron in <100> silicon

Journal Article · Sun Aug 01 04:00:00 EDT 1993 · Journal of the Electrochemical Society; (United States)

DOI:https://doi.org/10.1149/1.2220830· OSTI ID:6252294

Chen, N K; Lee, C ^[1]

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1. National Taiwan Inst. of Tech., Taipei (Taiwan, Province of China). Dept. of Chemical Engineering

Diffusion of boron in pure N[sub 2] pure NH[sup 3], and mixtures of NH[sub 3] and N[sub 2] has been investigated to study the effect of the oxynitridation reaction on the diffusivity. The oxynitridation-enhanced diffusion can be explained by a dual mechanism involving both vacancy and interstitial silicon atoms. There is no effect on the enhancement diffusivity due to the junction depths used here. The interstitial and probably the vacancy concentrations are flat. With a thin SiO[sub 2] layer on the silicon wafer and a low boron concentration, the diffusion coefficient can be expressed as a function of the partial pressure of NH[sub 3] and temperature as D = 0.105 exp [[minus]3.22eV/kT] + 1.0 [times] 10[sup [minus]6] exp [[minus]1.71 eV/kT]p[sub nh[sub 3]] cm[sup 2]/s.

• OSTI ID: 6252294
• Journal Information: Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 140:8; ISSN JESOAN; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure &amp; Phase Studies
AMMONIA
BORON
CHALCOGENIDES
CHEMICAL REACTIONS
DIFFUSION
DISPERSIONS
ELEMENTS
EQUATIONS
FILMS
HYDRIDES
HYDROGEN COMPOUNDS
MIXTURES
NITRIDATION
NITROGEN
NITROGEN COMPOUNDS
NITROGEN HYDRIDES
NONMETALS
OXIDATION
OXIDES
OXYGEN COMPOUNDS
PARTIAL PRESSURE
PERMEABILITY
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TEMPERATURE DEPENDENCE
THIN FILMS