Boron-enhanced diffusion of boron from ultralow-energy ion implantation

Journal Article · Thu Apr 01 04:00:00 EST 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123872· OSTI ID:341183

Agarwal, A; Gossmann, H; Eaglesham, D J; Herner, S B; Fiory, A T ^[1]; Haynes, T E ^[2]

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1. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050&hthinsp;{degree}C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1{percent} and 10{percent}, though it appears to be closer to 1{percent} for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3{times}10{sup 14} and 1{times}10{sup 15} cm{sup {minus}2}. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in the high B concentration layers. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 341183
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 74; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
ANNEALING
BORON
BORON IONS
DIFFUSION
INTERSTITIALS
ION IMPLANTATION
KEV RANGE 01-10
SILICON
TEMPERATURE RANGE 1000-4000 K