Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
- Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
Ion implantation of Si (60 keV, 1{times}10{sup 14}/cm{sup 2}) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1{times}10{sup 18} and 1{times}10{sup 19}/cm{sup 3}. Following post-implantation annealing at 740{degree}C for 15 min to allow agglomeration of the available interstitials into elongated {l_brace}311{r_brace} defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in {l_brace}311{r_brace} defects as a function of boron concentration, up to nearly complete disappearance of the {l_brace}311{r_brace} defects at boron concentrations of 1{times}10{sup 19}/cm{sup 3}. The reduction of the excess interstitial concentration is interpreted in terms of boron-interstitial clustering, and implications for transient-enhanced diffusion of B at high concentrations are discussed. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 286890
- Journal Information:
- Applied Physics Letters, Vol. 69, Issue 10; Other Information: PBD: Sep 1996
- Country of Publication:
- United States
- Language:
- English
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