Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon

Journal Article · Sun Sep 01 04:00:00 EDT 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.117441· OSTI ID:286890

Haynes, T E ^[1]; Eaglesham, D J; Stolk, P A; Gossmann, H; Jacobson, D C; Poate, J M ^[2]

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1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
2. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)

Ion implantation of Si (60 keV, 1{times}10{sup 14}/cm{sup 2}) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1{times}10{sup 18} and 1{times}10{sup 19}/cm{sup 3}. Following post-implantation annealing at 740{degree}C for 15 min to allow agglomeration of the available interstitials into elongated {l_brace}311{r_brace} defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in {l_brace}311{r_brace} defects as a function of boron concentration, up to nearly complete disappearance of the {l_brace}311{r_brace} defects at boron concentrations of 1{times}10{sup 19}/cm{sup 3}. The reduction of the excess interstitial concentration is interpreted in terms of boron-interstitial clustering, and implications for transient-enhanced diffusion of B at high concentrations are discussed. {copyright} {ital 1996 American Institute of Physics.}

• Research Organization: Oak Ridge National Laboratory
• DOE Contract Number: AC05-96OR22464
• OSTI ID: 286890
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 69; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALKYLATING AGENTS
ANNEALING
BORON ADDITIONS
CRYSTAL DEFECTS
CRYSTAL DOPING
DIFFUSION
INTERSTITIALS
ION IMPLANTATION
SILICON