Interstitial defects in silicon from 1{endash}5 keV Si{sup +} ion implantation
- Oak Ridge National Laboratory, MS-6048, Oak Ridge, Tennessee 37831 (United States)
- Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States)
- Eaton Corporation, 108 Cherry Hill Drive, Beverly, Massachusetts 01915 (United States)
Extended defects from 5-, 2-, and 1-keV Si{sup +} ion implantation are investigated by transmission electron microscopy using implantation doses of 1 and 3{times}10{sup 14}cm{sup {minus}2} and annealing temperatures from 750 to 900{degree}C. Despite the proximity of the surface, {l_brace}311{r_brace}-type defects are observed even for 1 keV. Samples with a peak concentration of excess interstitials exceeding {approximately}1{percent} of the atomic density also contain some {l_brace}311{r_brace} defects which are corrugated across their width. These so-called zig-zag {l_brace}311{r_brace} defects are more stable than the ordinary {l_brace}311{r_brace} defects, having a dissolution rate at 750{degree}C which is ten times smaller. Due to their enhanced stability, the zig-zag {l_brace}311{r_brace} defects grow to lengths that are many times longer than their distance from the surface. It is proposed that zig-zag {l_brace}311{r_brace} defects form during the early stages of annealing by coalescence the high volume density of {l_brace}311{r_brace} defects confined within a very narrow implanted layer. These findings indicate that defect formation and dissolution will continue to control the interstitial supersaturation from ion implantation down to very low energies. {copyright} {ital 1997 American Institute of Physics.}
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 529991
- Journal Information:
- Applied Physics Letters, Vol. 70, Issue 25; Other Information: PBD: Jun 1997
- Country of Publication:
- United States
- Language:
- English
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