Self-interstitial supersaturation during Ostwald ripening of end-of-range defects in ion-implanted silicon
Book
·
OSTI ID:400662
- Georg-August Univ. Goettingen and Sonderforschungsbereich, Goettingen (Germany). Physikalisches Inst.
Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows the authors to compare the time dependent self-interstitial supersaturation during post-implantation annealing in the presence of Frank-type stacking faults with that in the presence of {l_brace}311{r_brace}-defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.
- OSTI ID:
- 400662
- Report Number(s):
- CONF-960401--; ISBN 1-55899-332-0
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
42 ENGINEERING
ANNEALING
CRYSTAL DEFECTS
DIFFUSION
DISLOCATIONS
EXPERIMENTAL DATA
GERMANIUM ADDITIONS
ION IMPLANTATION
MATHEMATICAL MODELS
POINT DEFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SILICON
SIMULATION
STACKING FAULTS
TIME DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY
42 ENGINEERING
ANNEALING
CRYSTAL DEFECTS
DIFFUSION
DISLOCATIONS
EXPERIMENTAL DATA
GERMANIUM ADDITIONS
ION IMPLANTATION
MATHEMATICAL MODELS
POINT DEFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SILICON
SIMULATION
STACKING FAULTS
TIME DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY