{l_brace}311{r_brace} Defects in ion-implanted silicon: The cause of transient diffusion, and a mechanism for dislocation formation
- AT and T Bell Labs., Murray Hill, NJ (United States)
- Oak Ridge National Lab., TN (United States). Solid State Div.
Ion implantation is used at several critical stages of Si integrated circuit manufacturing. The authors show how {l_brace}311{r_brace} defects arising after implantation are responsible for both enhanced dopant diffusion during annealing, and stable dislocations post-anneal. They observe {l_brace}311{r_brace} defects in the earliest stages of an anneal. They subsequently undergo rapid Ostwald ripening and evaporation. At low implant doses evaporation dominates, and they can quantitatively relate the interstitials emitted from these defects to the transient enhancement in diffusivity of dopants such as B and P. At higher doses Ostwald ripening is significant, and they observe the defects to undergo a series of unfaulting reactions to form both Frank loops and perfect dislocations. They demonstrate the ability to control both diffusion and dislocations by the addition of small amounts of carbon impurities.
- Research Organization:
- Oak Ridge National Lab., TN (United States); AT and T Bell Labs., Murray Hill, NJ (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 201785
- Report Number(s):
- CONF-9503125--4; ON: DE96005430
- Country of Publication:
- United States
- Language:
- English
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