Relative stability of silicon self-interstitial defects
{l_brace}311{r_brace} defects and dislocation loops are formed after ion-implantation and annealing of a silicon wafer. Recent Transmission Electron Microscopy studies by Li and Jones have shown that sub-threshold dislocation loops nucleate from {l_brace}311{r_brace} defects. In our study, the conjugate gradient method with the Stillinger Weber potential is used to relax different configurations such as {l_brace}311{r_brace} defects with a maximum of five chains and perfect dislocation loops. From the formation energies thus obtained we find that there is an optimal width for each length of the {l_brace}311{r_brace} defects. Moreover the relative stability of {l_brace}311{r_brace}s and loops is studied as a function of defect size. We observe that at very small sizes the perfect loops are more stable than the {l_brace}311{r_brace}s. This may provide an explanation for the experimental observation by Robertson et al that, in an annealing study of end of range damage of amorphized samples, 45% of the loops had nucleated in the first 10 minutes of anneal. We propose that homogeneous nucleation, as against unfaulting of the {l_brace}311{r_brace}s, could be the source of these loops.
- Research Organization:
- Lawrence Livermore National Lab., CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 15007528
- Report Number(s):
- UCRL-JC-138808
- Country of Publication:
- United States
- Language:
- English
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