Modeling of dislocation loop growth and transient enhanced diffusion in silicon for amorphizing implants
Book
·
OSTI ID:541104
- Boston Univ., MA (United States). Dept. of Electrical and Computer Engineering
It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for {l_brace}311{r_brace} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.
- OSTI ID:
- 541104
- Report Number(s):
- CONF-961202--; ISBN 1-55899-343-6
- Country of Publication:
- United States
- Language:
- English
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