Boron-enhanced diffusion of boron from ultralow-energy boron implantation

Technical Report · Sun May 03 04:00:00 EDT 1998

DOI:https://doi.org/10.2172/650277· OSTI ID:650277

Agarwal, A; Eaglesham, D J; Gossmann, H J; Pelaz, L; Herner, S B; Jacobson, D C ^[1]; Haynes, T E ^[2]; Erokhin, Y E ^[3]

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1. Lucent Technologies, Murray Hill, NJ (United States). Bell Labs.
2. Oak Ridge National Lab., TN (United States). Solid State Div.
3. Eaton Corp., Beverly, MA (United States)

The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion), wherein the boron diffusivity is enhanced three to four times over the equilibrium diffusivity at 1,050 C in the proximity of a silicon layer containing a high boron concentration. It is shown that BED is associated with the formation of a fine-grain polycrystalline silicon boride phase within an initially amorphous Si layer having a high B concentration. For 0.5 keV B{sup +}, the threshold implantation dose which leads to BED lies between 3 {times} 10{sup 14} and of 1 {times} 10{sup 15}/cm{sup {minus}2}. Formation of the shallowest possible junctions by 0.5 keV B{sup +} requires that the implant dose be kept lower than this threshold.

• Research Organization: Oak Ridge National Lab., Solid State Div., TN (United States)
• Sponsoring Organization: USDOE Office of Energy Research, Washington, DC (United States)
• DOE Contract Number: AC05-96OR22464
• OSTI ID: 650277
• Report Number(s): ORNL/CP--96082; CONF-980528--; ON: DE98004111; BR: KC0202050
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON IONS
DIFFUSION
EXPERIMENTAL DATA
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
SILICON