Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions

Conference · Mon Dec 01 04:00:00 EST 1997

OSTI ID:554879

Agarwal, A ^[1]; Eaglesham, D J; Gossmann, H J; Pelaz, L; Herner, S B; Jacobson, D C ^[1]; Haynes, T E ^[2]; Erokhin, Y; Simonton, R ^[3]

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1. Lucent Technologies, Murray Hill, NJ (United States). Bell Labs.
2. Oak Ridge National Lab., TN (United States)
3. Eaton Corp., Beverly, MA (United States). Semiconductor Equipment Operations

Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which arises in the presence of B atomic concentrations at the surface of {approx} 6%, Boron-Enhanced-Diffusion (BED).

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC05-96OR22464
• OSTI ID: 554879
• Report Number(s): ORNL/CP--94748; CONF-971207--; ON: DE98000575; BR: KC0202050
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
BORON
CRYSTAL DEFECTS
CRYSTAL DOPING
DIFFUSION
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SILICON
SUPERLATTICES