Reduction of transient diffusion from 1{endash}5 keV Si{sup +} ion implantation due to surface annihilation of interstitials

Journal Article · Sat Nov 01 04:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.120552· OSTI ID:552939

Agarwal, A; Gossmann, H -; Eaglesham, D J; Pelaz, L; Jacobson, D C ^[1]; Haynes, T E ^[2]; Erokhin, Y E ^[3]

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1. Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States)
2. Oak Ridge National Laboratory, MS-6048, P.O. Box 2008, Oak Ridge, Tennessee 37831 (United States)
3. Eaton Corporation, 108 Cherry Hill Drive, Beverly, Massachusetts 01950 (United States)

The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1{times}10{sup 14} cm{sup {minus}2} Si{sup +} was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050{degree}C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si{sup +} ion range is observed at all temperatures, extrapolating to {approximately}1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of {lt}10 nm. The data presented here demonstrate that in the range of annealing temperatures of interest for p-n junction formation, TED is reduced at smaller ion implantation energies and that this is due to increased interstitial annihilation at the surface. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 552939
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 71; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
ANNEALING
BORON
DIFFUSION
INTERSTITIALS
ION IMPLANTATION
KEV RANGE 01-10
KEV RANGE 10-100
MONTE CARLO METHOD
P-N JUNCTIONS
SILICON
SILICON IONS
SIMULATION
SUPERLATTICES