Transient enhanced diffusion from decaborane molecular ion implantation

Journal Article · Thu Oct 01 04:00:00 EDT 1998 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.122353· OSTI ID:659293

Agarwal, A; Gossmann, H; Jacobson, D C; Eaglesham, D J ^[1]; Sosnowski, M; Poate, J M ^[2]; Yamada, I; Matsuo, J ^[3]; Haynes, T E ^[4]

---

1. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
2. New Jersey Institute of Technology, University Heights, Newark, New Jersey (United States)
3. Kyoto University, Sakyo, Kyoto 606-01 (Japan)
4. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

Transient enhanced diffusion (TED) from implantation of 5thinspkeVthinspB{sub 10}H{sub 14} and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10{sup 14} and 10{sup 15}thinspcm{sup {minus}2}. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10{sup 15}thinspcm{sup {minus}2}thinspB dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials approximately equal to the number of implanted atoms which can become substitutional in the silicon lattice. Accordingly, no contribution to TED is expected from the hydrogen in the B{sub 10}H{sub 14} ions and none is observed. Furthermore, there is no detectable effect in the diffusion profiles which can be attributed to a difference in the ion damage produced by the decaborane molecule and the boron atom. In both cases the reduction in diffusivity enhancement is due only to proximity of the implantation-induced excess interstitials to the wafer surface. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 659293
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 73; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
40 CHEMISTRY
ANNEALING
BORON IONS
CRYSTAL DOPING
DIFFUSION
INTERSTITIALS
ION IMPLANTATION
KEV RANGE 01-10
MASS SPECTRA
NUCLEAR REACTION ANALYSIS
ORGANIC COMPOUNDS
SILICON
TRANSMISSION ELECTRON MICROSCOPY