Boron transient enhanced diffusion in heavily phosphorus doped silicon

Book · Sat Nov 01 04:00:00 EST 1997

OSTI ID:541105

Huang, M B; Myler, U; Simpson, T W; Simpson, P J; Mitchell, I V ^[1]

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1. Univ. of Western Ontario, London, Ontario (Canada). Dept. of Physics

A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 {times} 10{sup 14} cm{sup {minus}2}, and then annealed at temperatures ranging from 700--1,000 C in a N{sub 2} ambient for varying durations. As P doping concentration increased from 3 {times} 10{sup 19} to 1 {times} 10{sup 20} cm{sup {minus}3}, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

• OSTI ID: 541105
• Report Number(s): CONF-961202--; ISBN 1-55899-343-6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BORON
CRYSTAL DEFECTS
DOPED MATERIALS
EXPERIMENTAL DATA
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
SILICON