Transient enhanced diffusion of boron in silicon: The interstitial flux

Book · Sat Nov 01 04:00:00 EST 1997

OSTI ID:541102

Simpson, T W; Goldberg, R D; Mitchell, I V ^[1]; Baribeau, J M ^[2]

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1. Univ. of Western Ontario, London, Ontario (Canada). Dept. of Physics and Astronomy
2. National Research Council, Ottawa, Ontario (Canada). Inst. for Microstructural Sciences

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences ({approximately}10{sup 12} cm{sup {minus}2}). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the {delta}-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping of silicon interstitials within the boron doped layers.

• OSTI ID: 541102
• Report Number(s): CONF-961202--; ISBN 1-55899-343-6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL DOPING
EXPERIMENTAL DATA
INTERSTITIALS
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
SILICON