Study of defects produced by ion implantation of silicon(III) using transmission electron microscopy (in French)
Technical Report
·
OSTI ID:4936955
Silicon samples were implanted with phosphorus (10/sup 16/ atoms/cm/sup 2/ at 30 keV) and arsenic (10/sup 15/ atoms/cm/sup 2/ at 50 to 140 keV). In the case of phosphorus, electron microscope observations revealed an amorphous layer epitaxially recrystallizing on the substrate at 650 deg C. The behavior of defects such as dislocation loops and dipoles were studied during annealing at higher temperatures. In the case of arsenic, the recrystallization of the amorphous layer was accompanied by microtwinning and the formation of various types of defect (loops, linear defects etc.). (FR)
- Research Organization:
- CEA Centre d'Etudes Nucleaires de Grenoble, 38 (France)
- Sponsoring Organization:
- Sponsor not identified
- NSA Number:
- NSA-29-016363
- OSTI ID:
- 4936955
- Report Number(s):
- CEA-CONF--2144; CONF-730574--9
- Country of Publication:
- France
- Language:
- French
Similar Records
Model of the recrystallization mechanism of amorphous silicon layers created by ion implantation
Cross-section transmission electron microscopy study of carbon-implanted layers in silicon
Heatpulse annealing of ion-implanted silicon: structural characterization by transmission electron microscopy
Technical Report
·
Wed Oct 31 23:00:00 EST 1979
·
OSTI ID:5676953
Cross-section transmission electron microscopy study of carbon-implanted layers in silicon
Journal Article
·
Mon Aug 20 00:00:00 EDT 1990
· Applied Physics Letters; (USA)
·
OSTI ID:6520310
Heatpulse annealing of ion-implanted silicon: structural characterization by transmission electron microscopy
Conference
·
Thu Mar 31 23:00:00 EST 1983
·
OSTI ID:5222055