Heatpulse annealing of ion-implanted silicon: structural characterization by transmission electron microscopy
A detailed structural investigation of Heatpulse rapid thermal annealed ion-implanted Si was carried out using TEM. Defect-free material was obtained after an 1100/sup 0/C/10 s anneal for 80 keV 2 x 10/sup 15/ /sup 75/As implanted Si, while dislocation loops were still present after lower temperature anneals. When compared with arsenic, 35 keV /sup 11/B implanted Si in the dose range 5 x 10/sup 14/ exhibited markedly different behavior under the same annealing conditions, in that residual defects in the form of line dislocations, loops, and rods were observed. Comparison with 1000/sup 0/C/30 min. furnace annealed samples showed differences in defect structures and impurity redistribution behavior as revealed by SIMS measurements. A model explaining the annealing behavior of implanted layers in silicon under rapid annealing conditions is proposed.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA); AG Associates, Palo Alto, CA (USA)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5222055
- Report Number(s):
- LBL-17320; CONF-8303121-2; ON: DE84009244
- Country of Publication:
- United States
- Language:
- English
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