Comparative study of laser and thermal annealing of boron-implanted silicon
Transmission electron microscopy has been used to study the effects of high-power laser pulses on as-grown and boron-implanted silicon. No defects (dislocations, dislocation loops, and stacking faults) were observed in either as-grown or boron-implanted (doses 3 x 10/sup 1/5 and 2 x 10/sup 1/6 ions cm/sup -/2) silicon after pulsed laser treatment. In thermally annealed specimens, on the other hand, a significant amount of damage was retained even after annealing at 1100 /sup 0/C for 30 min. After thermally annealing the implanted laser-treated specimens at 600 and 900 /sup 0/C for 30 min, no defects were observed for low-dose specimens; however, in high-dose specimens, precipitation of boron occurred after 600 /sup 0/C annealing and it increased after annealing at 900 /sup 0/C. These results and the electrical measurements on these samples suggest that the boron atoms in the precipitates are electrically inactive.
- Research Organization:
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
- OSTI ID:
- 6940238
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:7; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of thermal annealing in boron implanted, laser annealed silicon
Effect of thermal annealing in boron implanted, laser annealed silicon
Related Subjects
360605* -- Materials-- Radiation Effects
ANNEALING
ATOMIC IONS
BORON IONS
CARRIER DENSITY
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPTH DOSE DISTRIBUTIONS
DOPED MATERIALS
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELEMENTS
HALL EFFECT
HEAT TREATMENTS
ION IMPLANTATION
IONS
LASER RADIATION
MICROSCOPY
PHYSICAL RADIATION EFFECTS
PRECIPITATION
RADIATION DOSE DISTRIBUTIONS
RADIATION EFFECTS
RADIATIONS
SEMIMETALS
SEPARATION PROCESSES
SILICON
SPATIAL DOSE DISTRIBUTIONS