Effect of thermal annealing in boron implanted, laser annealed silicon

Conference · Sun Apr 15 04:00:00 EST 1979 · AIP (Am. Inst. Phys.) Conf. Proc.; (United States)

OSTI ID:6260609

Narayan, J; Larson, B C; Christie, W H

Electron microscopy and x-ray techniques have been used to investigate dislocation generation, precipitation of dopants and intrinsic defects, and the relaxation of unidirectional strains after thermal annealing of boron implanted, laser annealed silicon. It is shown that the number density of dislocations created near the interface after thermal annealing is small and therefore the unidirectional nature of the contraction in the doped layer is essentially retained. A small number density of defect clusters (mostly vacancy dislocation loops, average size 20 A) was also observed after thermal annealing at 1000 /sup 0/C. Boron depth profile changes, as determined by secondary ion mass spectroscopy, indicated an increase in boron concentration near the surface in addition to the expected broadening of profiles after thermal annealing.

• Research Organization: Solid State Division
• OSTI ID: 6260609
• Report Number(s): CONF-781121-
• Conference Information: Journal Name: AIP (Am. Inst. Phys.) Conf. Proc.; (United States) Journal Volume: 50:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ANNEALING
ATOMIC IONS
BORON IONS
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELEMENTS
HEAT TREATMENTS
HEATING
ION IMPLANTATION
IONS
LASER-RADIATION HEATING
LINE DEFECTS
PLASMA HEATING
SEMIMETALS
SILICON
STRUCTURAL CHEMICAL ANALYSIS