Raman spectroscopy for characterization of annealing of ion-implanted InP

Conference · Fri Jan 01 04:00:00 UTC 1982

OSTI ID:6737389

Myers, D R; Gourley, P L; Vaidyanathan, K V; Dunlap, H L

Raman spectroscopy has been used as a noncontacting, nondestructive tool to evaluate the properties of Si/sup +/- and Be/sup +/- implanted InP samples annealed at temperatures ranging from 600 to 750C using phosphosilicate glass (PSG) as the encapsulant. Carrier activation, carrier mobility and recovery of damage as a function of anneal temperature obtained from analysis of Raman data agree very well with independent electrical measurements.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA); Hughes Research Labs., Malibu, CA (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6737389
• Report Number(s): SAND-82-1401C; CONF-820960-5; ON: DE82022193
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
BERYLLIUM IONS
CARRIER MOBILITY
CHARGED PARTICLES
ENCAPSULATION
FIELD EFFECT TRANSISTORS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION IMPLANTATION
IONS
LASER SPECTROSCOPY
MIS TRANSISTORS
MOBILITY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RAMAN SPECTRA
SEMICONDUCTOR DEVICES
SILICON IONS
SPECTRA
SPECTROSCOPY
TRANSISTORS