Raman and electrical characterization of n-InP implanted by 630-keV nitrogen

Book · Mon Dec 30 23:00:00 EST 1996

OSTI ID:536282

Tiginyanu, I M ^[1]; Miao, J; Hartnagel, H L ^[1]; Rueck, D; Tinschert, K ^[2]; Ursaki, V V; Ichizli, V M ^[3]

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1. Technische Hochschule, Darmstadt (Germany). Inst. fuer Hochfrequenztechnik
2. GSI, Darmstadt (Germany)
3. Inst. of Applied Physics, Kishinev (Moldova, Republic of)

Raman scattering was shown to be a useful tool for studying the lattice disorder versus depth in ion-implanted InP. A conductivity compensation was reached in n-InP by N{sup +}-implantation and subsequent annealing in the temperature interval from 400 to 600 C. Although the values of resistivity are moderate (up to 10{sup 4} {Omega} {center_dot} cm), they prove to be sufficient for the purpose of fabricating InP membranes by using selective anodic etching techniques. This important feature opens new possibilities for applications of InP.

• OSTI ID: 536282
• Report Number(s): CONF-960498--; ISBN 0-7803-3283-0
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL DEFECTS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ETCHING
EXPERIMENTAL DATA
INDIUM PHOSPHIDES
ION IMPLANTATION
NITROGEN
RAMAN SPECTRA
SAMPLE PREPARATION