High resistivity InAlN by nitrogen or oxygen implantation

Conference · Mon May 01 04:00:00 EDT 1995

OSTI ID:57242

Zolper, J C ^[1]; Pearton, S J; Abernathy, C R; Vartuli, C B ^[2]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering

The authors report on the isolation properties of In{sub 0.75}Al{sub 0.25}N implanted with either N or O for several doses and post-implant anneal temperatures. Sheet resistance versus anneal temperature data are reported for the various implants with a maximum sheet resistance of {approximately}1x10{sup 9} {Omega}/{open_square} achieved for a high dose N-implant annealed at 600 or 700{degrees}C and {approximately}5x10{sup 8} {Omega}/{open_square} achieved for a high dose O-implant annealed at 600{degrees}C. These sheet resistances correspond to a greater than three order of magnitude increase over the as-grown values. The compensating defect level for the highest resistance N-implanted sample has an estimate ionization level 580 meV below the conduction band edge. Implant isolation of InAlN is also compared to oxygen implant isolation of In{sub x}Ga{sub 1-x}N -- where only a 50 to 100 fold increase in sheet resistance is observed -- to study the effect of Al in the isolation scheme.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 57242
• Report Number(s): SAND--94-2795C; CONF-950412--5; ON: DE95011023
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CRYSTAL DEFECTS
ELECTRIC CONDUCTIVITY
INDIUM NITRIDES
ION IMPLANTATION
NITROGEN
OXYGEN