Comparison of implant isolation species for GaN field-effect transistor structures
Conference
·
OSTI ID:20104631
Different ions (Ti{sup +}, O{sup +}, Fe{sup +}, Cr{sup +}) were implanted at multiple energies into GaN field effect transistor structures (n and p-type). The implantation was found to create deep states with energy levels in the range E{sub c} {minus}0.20 to 0.49 eV in n-GaN and at E{sub v} + 0.44 eV in p-GaN after annealing at 450--650 C. The sheet resistance of the GaN was at a maximum after annealing at these temperatures, reaching values of {approximately}4x10{sup 12} {Omega}/{open_square} in n-GaN and {approximately}10{sup 10}{Omega}/{open_square} in p-GaN. The mechanism for the implant isolation was damage-related trap formation for all of the ions investigated, and there was no evidence of chemically induced isolation.
- Research Organization:
- Univ. of Florida, Gainesville, FL (US)
- OSTI ID:
- 20104631
- Country of Publication:
- United States
- Language:
- English
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