Oxygen implant isolation of {ital n}-GaN field-effect transistor structures

Journal Article · Wed Sep 01 04:00:00 EDT 1999 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.590864· OSTI ID:689948

Dang, G ^[1]; Cao, X A ^[2]; Ren, F ^[1]; Pearton, S J ^[2]; Han, J; Baca, A G; Shul, R J ^[3]

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1. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
2. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
3. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

Multiple-energy (30{endash}325 keV) O{sup +} implantation into GaN field-effect transistor structures (n{approximately}10{sup 18} cm{sup {minus}3}, 3000 {Angstrom} thick) can produce as-implanted sheet resistances of 4{times}10{sup 12}&hthinsp;{Omega}/{open_square}, provided care is taken to ensure compensation of the region up to the projected range of the lowest energy implant. The sheet resistance remains above 10{sup 7}&hthinsp;{Omega}/{open_square} to annealing temperatures of {approximately}650&hthinsp;{degree}C and displays an activation energy of 0.29 eV. No diffusion of the implanted oxygen was observed for anneals up to 800&hthinsp;{degree}C. {copyright} {ital 1999 American Vacuum Society.}

• OSTI ID: 689948
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 5 Vol. 17; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ANNEALING
CRYSTAL DEFECTS
FIELD EFFECT TRANSISTORS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
INSOLATION
ION IMPLANTATION
MOSFET
OXYGEN
OXYGEN IONS