Oxygen implant isolation of {ital n}-GaN field-effect transistor structures
- Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Multiple-energy (30{endash}325 keV) O{sup +} implantation into GaN field-effect transistor structures (n{approximately}10{sup 18} cm{sup {minus}3}, 3000 {Angstrom} thick) can produce as-implanted sheet resistances of 4{times}10{sup 12}&hthinsp;{Omega}/{open_square}, provided care is taken to ensure compensation of the region up to the projected range of the lowest energy implant. The sheet resistance remains above 10{sup 7}&hthinsp;{Omega}/{open_square} to annealing temperatures of {approximately}650&hthinsp;{degree}C and displays an activation energy of 0.29 eV. No diffusion of the implanted oxygen was observed for anneals up to 800&hthinsp;{degree}C. {copyright} {ital 1999 American Vacuum Society.}
- OSTI ID:
- 689948
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 5 Vol. 17; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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