Doping and isolation of GaN, InGaN and InAlN using ion implantation

Conference · Tue Aug 01 04:00:00 EDT 1995

OSTI ID:100154

Pearton, S J; Vartuli, C B; Abernathy, C R ^[1]

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1. Univ. of Florida, Gainesville, FL (United States); and others

Both n- and p-type doping have been achieved in GaN using Si{sup +} or Mg{sup +}/P{sup +} implantation, respectively, followed annealing at {ge} 1050{degrees}C. Using proximity rapid thermal annealing (10sec) the GaN surface retains both smooth morphology and its original stoichiometry. Variable temperature Hall measurements reveal approximate energy levels of 62meV for the implanted Si and 171meV for the Mg, which are similar to their values in epitaxially grown GaN. Implant isolation of both n- and p-type GaN, and n-type In{sub 0.75}Al{sub 0.25}N with multiple energy inert species (e.g. N{sup +} or F{sup +}) produces high resistivity ({ge}10{sup 8}{omega}/{open_square}) after subsequent annealing in the range 600-700{degrees}C. Smaller increases in sheet resistance are observed for In{sub x}Ga{sup 1-x}N (x=0.33-0.75) under the same conditions due to the smaller energy bandgaps and the shallower energy levels of the damage-related states controlling the resistivity.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 100154
• Report Number(s): SAND--95-1750C; CONF-950982--1; ON: DE95016409
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
ANNEALING
ARRHENIUS EQUATION
ELECTRIC CONDUCTIVITY
ENERGY LEVELS
GALLIUM NITRIDES
INDIUM NITRIDES
ION IMPLANTATION
MAGNESIUM
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
SILICON
STOICHIOMETRY