Ion implantation doping and isolation of GaN

Journal Article · Mon Sep 04 04:00:00 EDT 1995 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.114518· OSTI ID:115784

Pearton, S J; Vartuli, C B ^[1]; Zolper, J C ^[2]; Yuan, C; Stall, R A ^[3]

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1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
3. EMCORE Corporation, Somerset, New Jersey 08873 (United States)

{ital N}- and {ital p}-type regions have been produced in GaN using Si{sup +} and Mg{sup +}/P{sup +} implantation, respectively, and subsequent annealing at {similar_to}1100 {degree}C. Carrier activation percentages of 93% for Si and 62% for Mg were obtained for implant doses of 5{times}10{sup 14} cm{sup {minus}2} of each element. Conversely, highly resistive regions ({gt}5{times}10{sup 9} {Omega}/{D`Alembertian}) can be produced in initially {ital n}- or {ital p}- type GaN by N{sup +} implantation and subsequent annealing at {similar_to}750 {degree}C. The activation energy of the deep states controlling the resistivity of these implant-isolated materials is in the range 0.8--0.9 eV. These process modules are applicable to the fabrication of a variety of different GaN-based electronic and photonic devices. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• OSTI ID: 115784
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 67; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
ANNEALING
CRYSTAL DOPING
GALLIUM NITRIDES
ION IMPLANTATION
MAGNESIUM ADDITIONS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PHOSPHORUS ADDITIONS
SILICON ADDITIONS