Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN
- Consultant, Stevenson Ranch, California 91381 (United States)
- U.S. Army, Research Office, Research Triangle Park, North Carolina 27709 (United States)
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
- Micropyretics Heaters International, Inc., Cincinnati, Ohio 45215 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- Office of Naval Research, Arlington, Virginia 22217 (United States)
A variety of different possible donor and acceptor impurities have been implanted into GaN and annealed up to 1450thinsp{degree}C. S{sup +} and Te{sup +} produce peak electron concentrations {le}5{times}10{sup 18} cm{sup {minus}3}, well below that achievable with Si{sup +}. Mg produces {ital p}-type conductivity, but Be{sup +}- and C{sup +}- implanted samples remained {ital n} type. No redistribution was observed for any of the implanted species for 1450thinsp{degree}C annealing. Much more effective damage removal was achieved for 1400thinsp{degree}C annealing of high-dose (5{times}10{sup 15} cm{sup {minus}2}) Si{sup +} implanted GaN, compared to the more commonly used 1100thinsp{degree}C annealing. {copyright} {ital 1999 American Vacuum Society.}
- OSTI ID:
- 359784
- Report Number(s):
- CONF-981126--
- Journal Information:
- Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 4 Vol. 17; ISSN 0734-2101; ISSN JVTAD6
- Country of Publication:
- United States
- Language:
- English
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