Redistribution of implanted dopants in GaN
- Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
- Wilson (R.G.), Stevenson Ranch, CA (United States)
- Office of Naval Research, Arlington, VA (United States); and others
Ion implantation is an effective technology for selected-area doping or isolation of GaN-based devices. As reviewed previously by Zolper, implantation of donors at high dose (> 5 {times} 10{sup 14} cm{sup {minus}2}) can be used to decrease source and drain access resistance in field effect transistors (FETs), at lower doses to create channel regions for FETs, while sequential implantation of both acceptors and donors may be used to fabricate p-n junctions. Donor (S, Se, and Te) and acceptor (Mg, Be, and C) dopants have been implanted into GaN at doses of 3--5 {times} 10{sup 14} cm{sup {minus}2} and annealed at temperatures up to 1,450 C. No redistribution of any of the elements is detectable by secondary ion mass spectrometry, except for Be, which displays behavior consistent with damage-assisted diffusion at 900 C. At higher temperatures, there is no further movement of the Be, for peak annealing temperature durations of 10 s. Effective diffusivities are {le} 2 {times} 10{sup {minus}13} cm{sup 2} {center_dot} s{sup {minus}1} at 1,450 C for each of the dopants in GaN.
- Research Organization:
- Sandia National Laboratory
- Sponsoring Organization:
- Defense Advanced Research Projects Agency, Arlington, VA (United States); Electric Power Research Inst., Palo Alto, CA (United States); USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 345074
- Report Number(s):
- CONF-9806176--
- Journal Information:
- Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 3 Vol. 28; ISSN JECMA5; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
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