Activation characteristics of donor and acceptor implants in GaN
Conference
·
OSTI ID:20104754
- and others
The ionization levels of different donor and acceptor species implanted into GaN were measured by temperature-dependent Hall data after high temperature (1,400 C) annealing. The values obtained were 28 meV (Si), 48 meV (S), 50 meV (Te) for the donors, and 170 meV for Mg acceptor. P-type conductivity was not achieved with either Be or C implantation. Basically all of the implanted species show no distribution during activation annealing. For high implant doses (5 x 10{sup 15} cm{sup {minus}2}) a high concentration of extended defects remains after 1,100 C anneals, but higher temperatures (1,400 C) produces a significant improvement in crystalline quality in the implanted region.
- Research Organization:
- Univ. of Florida, Gainesville, FL (US)
- Sponsoring Organization:
- Defense Advanced Research Project Agency; Electric Power Research Institute; National Science Foundation; US Department of Energy
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 20104754
- Country of Publication:
- United States
- Language:
- English
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