Implantation activation annealing of Si-implanted gallium nitride at temperatures > 1,100 C

Technical Report · Sun Jun 01 04:00:00 EDT 1997

DOI:https://doi.org/10.2172/486172· OSTI ID:486172

Zolper, J C; Han, J; Biefeld, R M ^[1]

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1. and others

The activation annealing of Si-implanted GaN is reported for temperatures from 1,100 to 1,400 C. Although previous work has shown that Si-implanted GaN can be activated by a rapid thermal annealing at {approximately}1,100 C, it was also shown that significant damage remained in the crystal. Therefore, both AlN-encapsulated and uncapped Si-implanted GaN samples were annealed in a metal organic chemical vapor deposition system in a N{sub 2}/NH{sub 3} ambient to further assess the annealing process. Electrical Hall characterization shows increases in carrier density and mobility for annealing up to 1,300 C before degrading at 1,400 C due to decomposition of the GaN epilayer. Rutherford backscattering spectra show that the high annealing temperatures reduce the implantation induced damage profile but do not completely restore the as-grown crystallinity.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States); Office of Naval Research, Washington, DC (United States); Defense Advanced Research Projects Agency, Arlington, VA (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 486172
• Report Number(s): SAND--97-1134C; CONF-970302--10; ON: DE97007590; CNN: Grant NSF DMR-9421109; Grant ONR N00014-92-5-1895
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CONTROLLED ATMOSPHERES
ELECTRICAL PROPERTIES
ELECTRONIC EQUIPMENT
EXPERIMENTAL DATA
GALLIUM NITRIDES
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
SILICON