Microwave annealing of ion implanted 6H-SiC

Technical Report · Wed May 01 00:00:00 EDT 1996

DOI:https://doi.org/10.2172/244606· OSTI ID:244606

Gardner, J A; Rao, M V; Tian, Y L ^[1]; Holland, O W ^[2]; Kelner, G; Freitas, Jr, J A ^[3]; Ahmad, I ^[4]

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1. George Mason Univ., Fairfax, VA (United States)
2. Oak Ridge National Lab., TN (United States)
3. Naval Research Lab., Washington, DC (United States)
4. FM Technologies Inc., Fairfax, VA (United States)

Microwave rapid thermal annealing has been utilized to remove the lattice damage caused by nitrogen (N) ion-implantation as well as to activate the dopant in 6H-SiC. Samples were annealed at temperatures as high as 1,400 C, for 10 min. Van der Pauw Hall measurements indicate an implant activation of 36%, which is similar to the value obtained for the conventional furnace annealing at 1,600 C. Good lattice quality restoration was observed in the Rutherford backscattering and photoluminescence spectra.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
• DOE Contract Number: AC05-96OR22464
• OSTI ID: 244606
• Report Number(s): CONF-950412--66; ON: DE96010667; CNN: Grant ECS-9319885
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL LATTICES
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
ION IMPLANTATION
MICROWAVE HEATING
NITROGEN IONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
TEMPERATURE RANGE 1000-4000 K