Microwave annealing of ion implanted 6H-SiC

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:504905

Gardner, J A; Rao, M V; Tian, Y L ^[1]; Holland, O W ^[2]; Kelner, G; Freitas, Jr, J A ^[3]; Ahmad, I ^[4]

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1. George Mason Univ., Fairfax, VA (United States)
2. Oak Ridge National Lab., TN (United States)
3. Naval Research Lab., Washington, DC (United States)
4. FM Technologies Inc., Fairfax, VA (United States)

Microwave rapid thermal annealing has been utilized to remove the lattice damage caused by nitrogen(N) ion-implantation as well as to activate the dopant in 6H-SiC. Samples were annealed at temperatures as high as 1,400 C, for 10 min. Van der Pauw Hall measurements indicate an implant activation of 36%, which is similar to the value obtained for the conventional furnace annealing at 1,600 C. Good lattice quality restoration was observed in the Rutherford backscattering and photoluminescence spectra.

• Sponsoring Organization: National Science Foundation, Washington, DC (United States); Oak Ridge National Lab., TN (United States)
• DOE Contract Number: AC05-96OR22464
• OSTI ID: 504905
• Report Number(s): CONF-960401--; ISBN 1-55899-333-9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ANNEALING
CRYSTAL LATTICES
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
HYDROGEN
ION IMPLANTATION
MICROWAVE HEATING
NITROGEN
PHOTOLUMINESCENCE
SEMICONDUCTOR DEVICES
SILICON CARBIDES
THERMAL CYCLING