Al and B ion-implantations in 6H- and 3C-SiC
- Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030 (United States)
- Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
- Naval Research Laboratory, Washington, D.C. 20375 (United States)
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
- GE Corporate Research and Development, Schenectady, New York 12301 (United States)
Low (keV) and high (MeV) energy Al and B implants were performed into n-type 6H- and 3C-SiC at both room temperature and 850 [degree]C. The material was annealed at 1100, 1200, or 1400 [degree]C for 10 min and characterized by secondary ion mass spectrometry, Rutherford backscattering (RBS), photoluminescence, Hall and capacitance-voltage measurement techniques. For both Al and B implants, the implant species was gettered at 0.7 R[sub p] (where R[sub p] is the projected range) in samples implanted at 850 [degree]C and annealed at 1400 [degree]C. In the samples that were amorphized by the room temperature implantation, a distinct damage peak remained in the RBS spectrum even after 1400 [degree]C annealing. For the samples implanted at 850 [degree]C, which were not amorphized, the damage peak disappeared after 1400 [degree]C annealing. P-type conduction is observed only in samples implanted by Al at 850 [degree]C and annealed at 1400 [degree]C in Ar, with 1% dopant electrical activation.
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6493564
- Journal Information:
- Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 77:6; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360606* -- Other Materials-- Physical Properties-- (1992-)
ALUMINIUM IONS
ANNEALING
BORON IONS
CARBIDES
CARBON COMPOUNDS
CHARGED PARTICLES
ELASTIC SCATTERING
ENERGY RANGE
GETTERING
HEAT TREATMENTS
ION IMPLANTATION
IONS
KEV RANGE
MATERIALS
MEV RANGE
N-TYPE CONDUCTORS
RUTHERFORD SCATTERING
SCATTERING
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SILICON COMPOUNDS
TEMPERATURE RANGE
TEMPERATURE RANGE 1000-4000 K