Phosphorus and boron implantation in 6H{endash}SiC
- Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030 (United States)
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
- Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
- Naval Research Laboratory, Washington, DC 20375 (United States)
- G.E. Corporate Research and Development, Schenectady, New York 12301 (United States)
Phosphorus and boron ion implantations were performed at various energies in the 50 keV{endash}4 MeV range. Range statistics of P{sup +} and B{sup +} were established by analyzing the as-implanted secondary ion mass spectrometry depth profiles. Anneals were conducted in the temperature range of 1400{endash}1700{degree}C using either a conventional resistive heating ceramic processing furnace or a microwave annealing station. The P implant was found to be stable at any annealing temperature investigated, but the B redistributed during the annealing process. The implant damage is effectively annealed as indicated by Rutherford backscattering measurements. For the 250keV/1.2{times}10{sup 15}cm{sup {minus}2} P implant, annealed at 1600{degree}C for 15 min, the measured donor activation at room temperature is 34{percent} with a sheet resistance of 4.8{times}10{sup 2}{Omega}/{open_square}. The p-type conduction could not be measured for the B implants. {copyright} {ital 1997 American Institute of Physics.}
- Research Organization:
- Oak Ridge National Laboratory
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 496376
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 81; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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