Material and n-p junction properties of N-, P-, and N/P-implanted SiC
- Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia22030 (United States)
- Naval Research Laboratory, Washington, D.C.20375 (United States)
- Oak Ridge National Laboratory, Oak Ridge, Tennessee37831 (United States)
- AFRL/MLPO, 3005 P Street, Suite 6, Wright Patterson Air Force Base, Ohio45433-7707 (United States)
- General Electric Corporate Research and Development, Schenectady, New York12301 (United States)
Elevated temperature (ET) multiple energy N, P, and N/P implantations were performed into p-type 6H-SiC epitaxial layers. For comparison, room temperature (RT) N and P implantations were also performed. In the N/P coimplanted material a sheet resistance of 2.1{times}10{sup 2}{Omega}/{open_square} was measured, which is lower compared to the values measured in N or P implanted material of the same net donor dose. The RT P implantation resulted in heavy lattice damage and consequently low P electrical activation, even after 1600{degree}C annealing. After annealing the Rutherford backscattering yield either coincided or came close to the virgin level for ET implantations and RT N implantation, whereas for RT P implantation the yield was high, indicating the presence of high residual damage. Vertical n-p junction diodes were made by selective area ET N, P, and N/P implantations and RT N and P implantations using a 2.5 {mu}m thick SiO{sub 2} layer as an implant mask. The diodes were characterized by capacitance{endash}voltage and variable temperature current{endash}voltage measurements. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 627891
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 83; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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