P-N junction formation in 6H-SiC by acceptor implantation into n-type substrate

Technical Report · Mon Jan 31 23:00:00 EST 1994

OSTI ID:52846

Rao, M V; Gardner, J; Griffiths, P ^[1]; Holland, O W ^[2]; Kelner, G ^[3]; Chi, P H; Simons, D S ^[4]

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1. George Mason Univ., Fairfax, VA (United States). Dept. of Electrical and Computer Engineering
2. Oak Ridge National Lab., TN (United States)
3. Naval Research Lab., Washington, DC (United States)
4. National Inst. of Standards and Technology, Gaithersburg, MD (United States)

Al- and B-implantations were performed into n-type 6H-bulk SiC and epitaxial layers at both room temperature and 850 C. Annealings were performed in the temperature range of 1,100--1,650 C in a SiC crucible. For single-energy implants, the implant gettered to the 0.7 R{sub p} location for annealing temperatures > 1,400 C. For the 850 C implanted samples the RBS yield in the annealed material is comparable to the yield in the as-grown material, indicating a good lattice recovery. A maximum activation of 18% for Al-implanted samples was observed. P-N junction diodes were made using Al-implanted material.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 52846
• Report Number(s): CONF-950220--6; ON: DE95010300; CNN: Grant ECS-9319885
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
66 PHYSICS
ALUMINIUM IONS
AMBIENT TEMPERATURE
BORON IONS
EXPERIMENTAL DATA
FABRICATION
ION IMPLANTATION
JUNCTION DIODES
N-TYPE CONDUCTORS
SILICON CARBIDES
TEMPERATURE RANGE 1000-4000 K