Elevated temperature nitrogen implants in 6H-SiC
- George Mason Univ., Fairfax, VA (United States)
- Oak Ridge National Lab., TN (United States)
- Naval Research Lab., Washington, DC (United States)
- National Inst. of Standards and Technology, Gaithersburg, MD (United States)
- Nantron Asociates, Alexandria, VA (United States)
- GE Corporate Research and Development, Schenectady, NY (United States)
Elevated temperature (700{degree}C) N ion implantations were performed into 6H-SiC in the energy range of 50 keV-4 MeV. By analyzing the as-implanted depth distributions, the range statistics of the N{sup +} in 6H-SiC have been established over this energy range. Annealing at 1500 and 1600{degree}C for 15 min resulted in Rutherford backscattering spectrometry scattering yields at the virgin crystal level, indicating a good recovery of the crystalline quality of the material without any redistribution of the dopant. A maximum electron concentration of 2 x 10{sup 19} cm{sup -3}, at room temperature, has been measured even for high-dose implants. The p-n junction diodes made by N ion implantation into a p-type substrate have a forward turn-on voltage of 2.2 V, an ideality factor of 1.90, and a reverse breakdown voltage of 125 V with nA range leakage current for -10 V bias at room temperature. By probing many devices on the same substrate we found uniform forward and reverse characteristics across the crystal. 33 refs., 10 figs., 3 tabs.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 420810
- Report Number(s):
- CONF-950661--; CNN: Grant ECS-9319885; Grant DAAE07-94-R066
- Journal Information:
- Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 5 Vol. 25; ISSN JECMA5; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
Similar Records
Compensation implants in 6H{endash}SiC
Ion implantation induced swelling in 6H-SiC