P- and N-type implantation doping of GaN with Ca and O
- Sandia National Labs., Albuquerque, NM (United States)
- Hughes Research Lab., Malibu, CA (United States)
- Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
- Emcore Corp., Somerset, NJ (United States)
III-N photonic devices have made great advances in recent years following the demonstration of doping of GaN p-type with Mg and n-type with Si. However, the deep ionization energy level of Mg in GaN ({approximately} 160 meV) limits the ionized of acceptors at room temperature to less than 1.0% of the substitutional Mg. With this in mind, the authors used ion implantation to characterize the ionization level of Ca in GaN since Ca had been suggested by Strite to be a shallow acceptor in GaN. Ca-implanted GaN converted from n-to-p type after a 1,100 C activation anneal. Variable temperature Hall measurements give an ionization level at 169 meV. Although this level is equivalent to that of Mg, Ca-implantation may have advantages (shallower projected range and less straggle for a given energy) than Mg for electronic devices. In particular, the authors report the first GaN device using ion implantation doping. This is a GaN junction field effect transistor (JFET) which employed Ca-implantation. A 1.7 {micro}m JFET had a transconductance of 7 mS/mm, a saturation current at 0 V gate bias of 33 mA/mm, a f{sub t} of 2.7 GHz, and a f{sub max} of 9.4 GHz. O-implantation was also studied and shown to create a shallow donor level ({approximately} 25 meV) that is similar to Si. SIMS profiles of as-implanted and annealed samples showed no measurable redistribution of either Ca or O in GaN at 1,125 C.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States); Office of Naval Research, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 238549
- Report Number(s):
- SAND--96-1053C; CONF-960401--25; ON: DE96010745; CNN: Grant NSF DMR-9421109; Grant ONR N00014-92-5-1895
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ca and O ion implantation doping of GaN
Implant activation and redistribution of dopants in GaN