Implant activation and redistribution of dopants in GaN

Conference · Mon Jul 01 04:00:00 EDT 1996

OSTI ID:274160

Zolper, J C ^[1]; Pearton, S J ^[2]; Wilson, R G ^[3]; Stall, R A ^[4]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. Florida Univ., Gainesville, FL (United States)
3. Hughes Research Labs., Malibu, CA (United States)
4. Emcore Corp., Somerset, NJ (United States)

GaN and related III-Nitride materials (IN, an) have recently been the focus of extensive research for photonic and electronic device applications. As this material system matures, ion implantation doping and isolation is expected to play an important role in advance device demonstrations. To this end, we report the demonstration of implanted p-type doping with Mg+P and Ca as well as n-type doping with Si in GaN. These implanted dopants require annealing 105 approximately1100 {degrees}C to achieve electrical activity, but demonstrate limited redistribution at this temperature. The redistribution of other potential dopants in GaN (such as Be, Zn, and Cd) will also be reported. Results for a GaN junction field effect transistor (JFET), the first GaN device to use implantation doping, will also be presented.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States); Department of Defense, Washington, DC (United States); Office of Naval Research, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 274160
• Report Number(s): SAND--96-1738C; CONF-9606110--4; ON: DE96011996; CNN: NSF Grant DMR-9421109; ONR Grant N00014-92-5-1895
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM NITRIDES
CALCIUM IONS
FIELD EFFECT TRANSISTORS
GALLIUM NITRIDES
INDIUM NITRIDES
ION IMPLANTATION
MAGNESIUM IONS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PHOSPHORUS IONS
SEMICONDUCTOR JUNCTIONS
SILICON IONS