Implantation doping of GaN
- Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)
Ion implantation has played an enabling role in the realization of many high performance photonic and electronic devices in mature semiconductor materials systems such as Si and GaAs. This can also be expected to be the case in III-Nitride based devices as the material quality continues to improve. This paper reviews the progress in ion implantation processing of GaN. Details are presented of the successful demonstrations of implant isolation as well as n- and p-type implantation doping of GaN. Implant doping has required activation annealing at temperatures in excess of 1000{degree}C. The nature of the implantation induced damage and its response to annealing is addressed using Rutherford Backscattering. Finally, results are given for the first demonstration of a GaN device fabricated using ion implantation doping, a GaN junction field effect transistor (JFET). {copyright} {ital 1997 American Institute of Physics.}
- Research Organization:
- Sandia National Laboratory
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 580103
- Report Number(s):
- CONF-961110--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 392; ISSN 0094-243X; ISSN APCPCS
- Country of Publication:
- United States
- Language:
- English
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